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| Bulletin I0120J rev. A 02/97 IR180DM..CCB SERIES STANDARD RECOVERY DIODES Junction Size: Wafer Size: VRRM Class: Passivation Process: Square 180 mils 4" 800 and 1200 V Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics Parameters V FM V RRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1050 mV 800 and 1200 V Test Conditions T J = Amb., I F = 20 A T J = Amb., I RRM = 100 A (1) (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 m) 180 x 180 mils (see drawing) 100 mm, with std. < 110 > flat 300 m 45 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR180DM..CCB Series Bulletin I0120J rev. A 02/97 Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 International Rectifier Device Chip Dimension in Mils 180 2 D 3 M 4 12 5 C 6 CB 7 Type of Device: D = Wire Bondable Standard Recovery Diode Passivation Process: M = Glassivated MOAT Voltage code: Code x 100 = VRRM Metallization: C = Aluminium (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box) Available Class 08 = 800 V 12 = 1200 V None = Probed Die in chip carrier Outline Table All dimensions are in microns (mils) 2 www.irf.com IR180DM..CCB Series Bulletin I0120J rev. A 02/97 Wafer Layout TOP VIEW N 293 Basic Cells All dimensions are in millimeters www.irf.com 3 |
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